glass silicon zener diode v oltage: 2.4 to 75 v olts power: 0.5 w atts rohs device page 1 rev : b 1n5221b-g thru. 1n5267b-g p ar am et er s ym bo l v al ue u ni t maximum ratings and electrical characteristics d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) d o - 3 5 qw -bz001 0.165(4.20)max. 1.02(26.00) min. 0.079(2.00)max. 0.020(0.52)t yp. 1.02(26.00) min. features -planar die construction -500mw power dissipation -ideally suited for automated assembly processes mechanical data -case: molded plastic, do-35 -polarity: indicated by cathode band -marking: t ype number -w eight: 0.13gram power dissipation at t amb=25c junction temperature storage temperature range pt ot tj tstg 500 175 -65 ~ +175 mw c c pa ra m et er sy m bo l m ax un it thermal resistance (junction to ambient air) r ja 0.3* m in c o m c h i p s m d d i o d e s p e c i a l i s t -t erminals : solderable per mil-std-750,method method 2026 forward voltage at if = 200ma vf 1.1 v k/mw v alid provided that leads at a distance of 8mm from case are kept at ambient temperature. v alid provided that leads at a distance of 10mm from case are kept at ambient temperature. (t a =25c, unless otherwise noted)
glass silicon zener diode page 2 rev : b electrical characteristics (1n5221b-g thru. 1n5267b-g) qw -bz001 nominal zener v oltage maximum zener impedance vz @ i zt zz k @ iz k i r @ v r nom.v ma a v 1n5221b-g 2.4 20 30 1200 100 1 1N5222B-G 2.5 20 30 1250 100 1 1n5223b-g 2.7 20 30 1300 75 1 1n5224b-g 2.8 20 30 1400 75 1 1n5225b-g 3.0 20 29 1600 50 1 1n5226b-g 3.3 20 28 1600 25 1 1n5227b-g 3.6 20 24 1700 15 1 1n5228b-g 3.9 20 23 1900 10 1 1n5229b-g 4.3 20 22 2000 5 1 1n5230b-g 4.7 20 19 1900 5 2 1n5231b-g 5.1 20 17 1600 5 2 1n5232b-g 5.6 20 1 1 1600 5 3 1n5233b-g 6.0 20 7 1600 5 3.5 1n5234b-g 6.2 20 7 1000 5 4 1n5235b-g 6.8 20 5 750 3 5 1n5236b-g 7.5 20 6 500 3 6 1n5237b-g 8.2 20 8 500 3 6.5 1n5238b-g 8.7 20 8 600 3 6.5 1n5239b-g 9.1 20 10 600 3 7 1n5240b-g 10 20 17 600 3 8 1n5241b-g 1 1 20 22 600 2 8.4 1n5242b-g 12 20 30 600 1 9.1 1n5243b-g 13 9.5 13 600 0.5 9.9 1n5244b-g 14 9 15 600 0.1 10 1n5245b-g 15 8.5 16 600 0.1 1 1 1n5246b-g 16 7.8 17 600 0.1 12 1n5247b-g 17 7.4 19 600 0.1 13 1n5248b-g 18 7 21 600 0.1 14 1n5249b-g 19 6.6 23 600 0.1 14 1n5250b-g 20 6.2 25 600 0.1 15 1n5251b-g 22 5.6 29 600 0.1 17 1n5252b-g 24 5.2 33 600 0.1 18 1n5253b-g 25 5 35 600 0.1 19 1n5254b-g 27 4.6 41 600 0.1 21 1n5255b-g 28 4.5 44 600 0.1 21 1n5256b-g 30 4.2 49 600 0.1 23 1n5257b-g 33 3.8 58 700 0.1 25 1n5258b-g 36 3.4 70 700 0.1 27 1n5259b-g 39 3.2 80 800 0.1 30 1n5260b-g 43 3 93 900 0.1 33 1n5261b-g 47 2.7 105 1000 0.1 36 1n5262b-g 51 2.5 125 1 100 0.1 39 1n5263b-g 56 2.2 150 1300 0.1 43 1n5264b-g 60 2.1 170 1400 0.1 46 1n5265b-g 62 2 185 1400 0.1 47 1n5266b-g 68 1.8 230 1600 0.1 52 1n5267b-g 75 1.7 270 1700 0.1 56 maxumum reverse leakage current part no. o (1)base on dc measurement at thermal equilibrium; lead length=9.5(3/8"); thermal resistance of heat sink=30 c/w c o m c h i p s m d d i o d e s p e c i a l i s t min.v max.v 2.28 2.38 2.57 2.66 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.70 5.89 6.46 7.13 7.79 8.27 8.65 9.50 10.45 1 1.40 12.35 13.30 14.25 15.20 16.15 17.10 18.05 19.00 20.90 22.80 23.75 25.65 26.60 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 57.00 58.90 64.60 71.25 2.52 2.63 2.84 2.94 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.30 6.51 7.14 7.88 8.61 9.14 9.56 10.50 1 1.55 12.60 13.65 14.70 15.75 16.80 17.85 18.90 19.95 21.00 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 63.00 65.10 71.40 78.75 ma 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 marking code 1n5221b 1n5222b 1n5223b 1n5224b 1n5225b 1n5226b 1n5227b 1n5228b 1n5229b 1n5230b 1n5231b 1n5232b 1n5233b 1n5234b 1n5235b 1n5236b 1n5237b 1n5238b 1n5239b 1n5240b 1n5241b 1n5242b 1n5243b 1n5244b 1n5245b 1n5246b 1n5247b 1n5248b 1n5249b 1n5250b 1n5251b 1n5252b 1n5253b 1n5254b 1n5255b 1n5256b 1n5257b 1n5258b 1n5259b 1n5260b 1n5261b 1n5262b 1n5263b 1n5264b 1n5265b 1n5266b 1n5267b zz t @ iz t
glass silicon zener diode page 3 rev : b characteristics curves (1n5221b-g thru. 1n5267b-g) qw -bz001 c o m c h i p s m d d i o d e s p e c i a l i s t fig.2 - breakdown characteristics 0 5 10 15 20 0 20 40 vz, (v) i z , ( m a ) 10 30 50 25 30 t est current iz = 20ma fig.1- power derating curve 0 50 100 150 200 250 0 200 400 600 ambient t emperature, ( c ) p o w e r d i s s i p a t i o n , ( m w ) 100 300 500
glass silicon zener diode c o m c h i p s m d d i o d e s p e c i a l i s t page 3 rev : b qw -bz001 b t aping specification for axial lead diodes l 1 l 2 e a z t e standard packaging 90 5 b z t e l 1 - l 2 d o - 3 5 s y m b o l a ( m m ) ( i n c h ) 0 . 0 3 9 ( m a x ) 5 . 0 0 0 . 5 5 2 . 0 1 . 5 6 . 0 0 . 4 1 . 0 ( m a x ) 1 . 2 ( m a x ) 0 . 8 ( m a x ) 2 . 0 4 7 0 . 0 5 9 0 . 1 9 7 0 . 0 2 0 0 . 0 4 7 ( m a x ) 0 . 2 3 6 0 . 0 1 6 0 . 0 3 2 ( m a x ) c a s e t y p e d o - 3 5 5 , 0 0 0 b o x ( p c s ) a m m o p a c k c a r t o n ( p c s ) 1 0 0 , 0 0 0 1n 52 xxb cathode band marking code part number 1n5221-g ~ 1n5267-g marking code 1n50xxb xx : product type marking code (see page.2)
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